The G60N06T from Goford Semiconductor is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 14 to 21 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Through Hole. More details for G60N06T can be seen below.