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G69F

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G69F Image

The G69F from Goford Semiconductor is a MOSFET with Continous Drain Current -16 A, Drain Source Resistance 13 to 22 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for G69F can be seen below.

Product Specifications

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Product Details

  • Part Number
    G69F
  • Manufacturer
    Goford Semiconductor
  • Description
    -12 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -16 A
  • Drain Source Resistance
    13 to 22 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    35 to 48 nC
  • Power Dissipation
    18 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN6L
  • Applications
    PWM applications, Load switch, Battery charge in cellular handset

Technical Documents
View details on the manufacturer's website
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