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GT025N06AT

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The GT025N06AT from Goford Semiconductor is a MOSFET with Continous Drain Current 170 A, Drain Source Resistance 2 to 3.2 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Through Hole. More details for GT025N06AT can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT025N06AT
  • Manufacturer
    Goford Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    170 A
  • Drain Source Resistance
    2 to 3.2 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    70 nC
  • Power Dissipation
    215 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power switch, DC/DC converters, Synchronous Rectification

Technical Documents
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