The 5SFG 0780B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for e-mobility applications. This MOSFET has a drain-source breakdown voltage of over 1200 V and a drain-source on-state resistance of 2.4 mΩ. It has a gate-source voltage of less than 15 V and a gate threshold voltage of 2.4 V. This SiC MOSFET has a continuous drain current of up to 780 A and a pulsed drain current of less than 1560 A. It consists of a pin-fin structure that offers the lowest thermal resistance with enhanced liquid cooling performance. This MOSFET provides the lowest overall stray inductance that can enable an efficient design of converters. It is available in a compact package that measures 110 x 69 x 17.35 mm and is ideal for main drive trains in xEVs, e-trucks, e-buses, traction auxiliary converters, and xEV-charging applications.
