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ES138KQ

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The ES138KQ from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 0.36 A, Drain Source Resistance 1.25 to 4.5 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for ES138KQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    ES138KQ
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    60 V, 0.36 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.36 A
  • Drain Source Resistance
    1.25 to 4.5 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    0.65 to 1.0 nC
  • Switching Speed
    19.2 to 50 ns
  • Power Dissipation
    0.236 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 50 pF

Technical Documents
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