1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Hunan Jingxin Microelectronics
  6. ES16N65C

ES16N65C

Download Datasheet Request Quote

Note : Your request will be directed to Hunan Jingxin Microelectronics.

The ES16N65C from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 12 to 16 A, Drain Source Resistance 0.52 to 0.62 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for ES16N65C can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ES16N65C
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    650 V, 12 to 16 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 to 16 A
  • Drain Source Resistance
    0.52 to 0.62 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    35 nC
  • Switching Speed
    16 to 35 ns
  • Power Dissipation
    240 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 1225 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products