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SSM6N357R

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SSM6N357R Image

The SSM6N357R from Toshiba is a MOSFET with Continous Drain Current 0.65 A, Drain Source Resistance 800 to 2400 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.3 to 2 V. Tags: Surface Mount. More details for SSM6N357R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N357R
  • Manufacturer
    Toshiba
  • Description
    60 V, 1.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.65 A
  • Drain Source Resistance
    800 to 2400 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.3 to 2 V
  • Gate Charge
    1.5 nC
  • Power Dissipation
    1.5 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP6F
  • Applications
    Relay Drivers

Technical Documents
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