The ES3400 from Hunan Jingxin Microelectronics is an N-Channel Enhancement Mode Power MOSFET that is ideal for DC/DC conversion, power management in portable/desktop PCs, load switches, and PWM applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1 V, and a drain-source on-resistance of 21 milli-ohms. This MOSFET has a continuous drain current of up to 5.8 A and a pulsed drain current of less than 30 A. It is designed using advanced trench MOSFET technology to achieve low on-state drain-source resistance and leakage current. This MOSFET is avalanche-rated, making it suitable for use in rugged and high-reliability demanding applications. It is available in a surface-mount package that measures 2.8 x 2.25 mm.