ES3406

Note : Your request will be directed to Hunan Jingxin Microelectronics.

The ES3406 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 3.3 to 4.3 A, Drain Source Resistance 34 to 70 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.4 V. Tags: Surface Mount. More details for ES3406 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ES3406
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    30 V, 3.3 to 4.3 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.3 to 4.3 A
  • Drain Source Resistance
    34 to 70 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.4 V
  • Gate Charge
    4.1 nC
  • Switching Speed
    4.5 to 18.5 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 170 pF

Technical Documents

Latest MOSFETs

View more products