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ES3415A

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The ES3415A from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -3.8 to -4.9 A, Drain Source Resistance 30 to 47 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.5 to -0.9 V. Tags: Surface Mount. More details for ES3415A can be seen below.

Product Specifications

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Product Details

  • Part Number
    ES3415A
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    -20 V, -3.8 to -4.9 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.8 to -4.9 A
  • Drain Source Resistance
    30 to 47 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.5 to -0.9 V
  • Gate Charge
    9.5 nC
  • Switching Speed
    13 to 30 ns
  • Power Dissipation
    1.39 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3L
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 750 pF

Technical Documents
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