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ES6604

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The ES6604 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 3.0 to 3.9 A, Drain Source Resistance 38 to 69 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.45 to 1.1 V. Tags: Surface Mount. More details for ES6604 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ES6604
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    20 V, 3.0 to 3.9 A, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.0 to 3.9 A
  • Drain Source Resistance
    38 to 69 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.45 to 1.1 V
  • Gate Charge
    3.0 nC
  • Switching Speed
    2.6 to 20 ns
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 240 pF

Technical Documents
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