The ESGNE10R17 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 6.9 to 8.9 A, Drain Source Resistance 14 to 22 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for ESGNE10R17 can be seen below.