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ESGNU06R17

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The ESGNU06R17 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 35 to 48 A, Drain Source Resistance 12 to 21 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Through Hole. More details for ESGNU06R17 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESGNU06R17
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    60 V, 35 to 48 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 to 48 A
  • Drain Source Resistance
    12 to 21 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    45 nC
  • Switching Speed
    12 to 79 ns
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 2033 pF

Technical Documents
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