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TJ8S06M3L

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TJ8S06M3L Image

The TJ8S06M3L from Toshiba is a MOSFET with Continous Drain Current -8 A, Drain Source Resistance 80 to 130 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -3 to -2 V. Tags: Surface Mount. More details for TJ8S06M3L can be seen below.

Product Specifications

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Product Details

  • Part Number
    TJ8S06M3L
  • Manufacturer
    Toshiba
  • Description
    -60 V, 19 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8 A
  • Drain Source Resistance
    80 to 130 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -3 to -2 V
  • Gate Charge
    19 nC
  • Power Dissipation
    27 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators

Technical Documents
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