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ESNQ15R14

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The ESNQ15R14 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 54 to 70 A, Drain Source Resistance 12.5 to 14 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for ESNQ15R14 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESNQ15R14
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    150 V, 54 to 70 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    54 to 70 A
  • Drain Source Resistance
    12.5 to 14 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    36 nC
  • Switching Speed
    22 to 25 ns
  • Power Dissipation
    139 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 2631 pF

Technical Documents
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