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ESNS21309C

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The ESNS21309C from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -77 to -100 A, Drain Source Resistance 4.0 to 7.2 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.0 to -2.0 V. Tags: Surface Mount. More details for ESNS21309C can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESNS21309C
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    -30 V, -77 to -100 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -77 to -100 A
  • Drain Source Resistance
    4.0 to 7.2 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.0 to -2.0 V
  • Gate Charge
    78 nC
  • Switching Speed
    15 to 95 ns
  • Power Dissipation
    84 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5x6-8L
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 3456 pF

Technical Documents
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