The SiHR080N60E-T1-GE3 from Vishay is a Power MOSFET that is ideal for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), high-intensity discharge (HID, fluorescent ballast lighting, welding, Induction heating, motor drives, battery chargers, and solar PV inverters applications. It has a drain-source breakdown voltage of 600 V, a gate threshold voltage of less than 5 V, and a drain-source on-resistance of less than 0.074 ohms. This MOSFET has a continuous drain current of up to 51 A and a power dissipation of less than 500 W. It offers a low figure of merit (FOM) and is characterized by a combination of reduced on-resistance and gate charge, resulting in enhanced efficiency. This 4th generation-based power MOSFET is avalanche energy-rated (UIS) to ensure robustness and reliability under extreme conditions. This RoHS-compliant is available in a surface-mount package that measures 8.46 x 11.77 mm.
