The ESNU07R086 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 52 to 80 A, Drain Source Resistance 6.6 to 8.6 milli-ohm, Drain Source Breakdown Voltage 68 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.5 V. Tags: Through Hole. More details for ESNU07R086 can be seen below.