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ESPE10R100

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The ESPE10R100 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -3.9 to -5.0 A, Drain Source Resistance 82 to 120 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.0 to -2.5 V. Tags: Surface Mount. More details for ESPE10R100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESPE10R100
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    -100 V, -3.9 to -5.0 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.9 to -5.0 A
  • Drain Source Resistance
    82 to 120 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.0 to -2.5 V
  • Gate Charge
    65 nC
  • Switching Speed
    13 to 84 ns
  • Power Dissipation
    3.12 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 4000 pF

Technical Documents
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