The AIMBG120R010M1XTMA1 from Infineon Technologies is an Automotive Qualified SiC Trench Power MOSFET that has been designed to optimize performance and enhance the overall device experience. It has a drain-source voltage of up to 1200 V, a gate threshold voltage of 4.3 V, and a drain-source on-resistance of 8.7 milli-ohms. This AEC-Q100-qualified MOSFET has a continuous drain current of up to 205 A and a power dissipation of less than 882 W. It is based on the new performance-optimized chip technology (Gen1p) with an improved drain-source on-resistance. This AEC-Q101-qualified MOSFET offers best-in-class switching energy that results in lower switching losses and reduced cooling efforts. It enables higher power density and faster switching speeds with the lowest device capacitance values and is complemented by a low Crss/Ciss ratio along with a high gate threshold voltage for preventing parasitic turn-on effects.
This power MOSFET guarantees the best thermal performance with innovative die-to-attach technology, enabling a faster and cleaner switching operation while maintaining low package stray inductance. It ensures better gate control and reduced switching losses with the sense (Kelvin) source pin, while its inherent minimal creepage distance of 5.85 mm (material group II) makes it ideal for 800 V applications without the need for coating. This RoHS-compliant MOSFET is available in a surface-mount package that measures 10.20 x 9.45 x 4.50 mm and is ideal for an onboard charger, DC/DC converter, and auxiliary drive applications.
