The AIMCQ120R080M1T from Infineon Technologies is an Automotive-Grade Silicon Carbide (SiC) MOSFET that is designed for on-board charger, DC-DC converter, and auxiliary drive applications. It has a drain-source voltage of 1200 V, a gate threshold voltage of up to 4.4 V, and a drain-source on-resistance of 80 milli-ohms. This MOSFET has a continuous drain current of up to 34 A and a power dissipation of less than 211 W. It has a design based on optimized chip technology with improved RDson. This MOSFET has excellent switching energy for lower switching losses and reduced cooling efforts. It offers low device capacitances for higher switching speeds and higher power density. This MOSFET benefits from a drive (Kelvin) source pin for better gate control and reduced switching losses. It is available in a low Rth top-side cooled surface-mount package that measures 15.10 x 21.11 x 2.35 mm.