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BSC014N06NS

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The BSC014N06NS from Infineon Technologies is an N-Channel MOSFET that is ideal for industrial applications. It has a drain-source breakdown voltage of over 60 V, a gate threshold voltage of up to 3.3 V, and a drain-source on-resistance of 1.45 milli-ohms. This JEDEC-qualified MOSFET has a continuous drain current of up to 257 A and a power dissipation of less than 188 W. It is avalanche-tested and offers superior thermal resistance. This RoHS-compliant MOSFET is available in a surface-mount package that measures 6.10 x 5.35 x 1.20 mm and is suitable for high-performance SMPS applications.

Product Specifications

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Product Details

  • Part Number
    BSC014N06NS
  • Manufacturer
    Infineon Technologies
  • Description
    60 V JEDEC-Qualified N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    31 to 257 A
  • Drain Source Resistance
    1.2 to 2.2 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.1 to 3.3 V
  • Gate Charge
    89 to 104 nC
  • Power Dissipation
    3 to 188 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8
  • Applications
    48 V power distribution, Automotive head unit, Commercial, construction and agricultural vehicles (CAV), rogrammable logic controller (PLC), Uninterruptible power supplies (UPS)

Technical Documents
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