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BSC112N06LD

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BSC112N06LD Image

The BSC112N06LD from Infineon Technologies is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 9.5 to 15.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for BSC112N06LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSC112N06LD
  • Manufacturer
    Infineon Technologies
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    9.5 to 15.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    41 to 55 nC
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8
  • Applications
    SMPS, Inductive wireless charging, Load switches, Battery management systems, LV drives

Technical Documents
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