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BSO612CV G

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BSO612CV G Image

The BSO612CV G from Infineon Technologies is a MOSFET with Continous Drain Current -2 to 3 A, Drain Source Resistance 90 to 300 milliohm, Drain Source Breakdown Voltage -60 to 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to 4 V. Tags: Surface Mount. More details for BSO612CV G can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSO612CV G
  • Manufacturer
    Infineon Technologies
  • Description
    -60 to 60 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2 to 3 A
  • Drain Source Resistance
    90 to 300 milliohm
  • Drain Source Breakdown Voltage
    -60 to 60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to 4 V
  • Gate Charge
    10.3 to 16 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-DSO-8
  • Applications
    Automotive, DC-DC, Motor control, Onboard charger

Technical Documents
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