The BUP15CN060L-01 from Infineon Technologies is a Radiation N-channel Power MOSFET that has been designed for space and radiation-prone environments. It has a drain-source voltage of less than 150 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of 60 milli-ohms. This AEC-Q101-qualified MOSFET is equipped with single event effect (SEE) tolerance and total ionization dose (TID) tolerance, with approval for up to 30 kRad. It is available in a surface-mount package that measures 14.61 x 9.8 x 4.3 mm and is suitable for DC-DC converters, power distribution units, and power conditioning unit applications.