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F3L8MR12W2M1HP_B11

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F3L8MR12W2M1HP_B11 Image

The F3L8MR12W2M1HP_B11 from Infineon Technologies is a MOSFET with Continous Drain Current 85 A, Drain Source Resistance 8.1 to 17.4 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 23 V, Gate Source Threshold Voltage 3.25 to 4.75 V. Tags: Surface Mount. More details for F3L8MR12W2M1HP_B11 can be seen below.

Product Specifications

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Product Details

  • Part Number
    F3L8MR12W2M1HP_B11
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    85 A
  • Drain Source Resistance
    8.1 to 17.4 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 23 V
  • Gate Source Threshold Voltage
    3.25 to 4.75 V
  • Gate Charge
    297 nC
  • Power Dissipation
    0.02 W
  • Temperature operating range
    -40 to 125 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Solar applications, Three-level applications, DC charger for EV

Technical Documents
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