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IAUS260N10S5N019T

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IAUS260N10S5N019T Image

The IAUS260N10S5N019T from Infineon Technologies is a MOSFET with Continous Drain Current 91 to 260 A, Drain Source Resistance 1.6 to 2.6 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.2 to 3.8 V. Tags: Surface Mount. More details for IAUS260N10S5N019T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUS260N10S5N019T
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    91 to 260 A
  • Drain Source Resistance
    1.6 to 2.6 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    128 to 166 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HDSOP-16-2
  • Applications
    Automotive

Technical Documents
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