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IAUZ40N08S5N100

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IAUZ40N08S5N100 Image

The IAUZ40N08S5N100 from Infineon Technologies is a MOSFET with Continous Drain Current 40 A, Drain Source Resistance 8.4 to 14.5 Mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.2 to 3.8 V. Tags: Surface Mount. More details for IAUZ40N08S5N100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUZ40N08S5N100
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    8.4 to 14.5 Mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    18.6 to 24.2 nC
  • Power Dissipation
    68 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TSDSON-8
  • Applications
    Automotive

Technical Documents
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