The IMW120R014M1H from Infineon Technologies is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source breakdown voltage of 1200 V with a drain-source resistance of 14 mΩ and a gate threshold voltage of 4.2 V. This MOSFET has a continuous drain current of up to 127 A and power consumption of less than 455 W. It is built on state-of-the-art Infineon’s SiC trench technology and is used in mid-power applications. This MOSFET is optimized to enable maximum system performance, compactness, and reliability. It is suitable for bi-directional topologies with continuous hard commutation and is compatible with standard drivers. It is available in a through-hole package and is ideal for general purpose drives (GPD), EV charging, online UPS, string inverters, and solar power applications.