The SiJH800E from Vishay is an N-Channel Trench FET Power MOSFET. It has a drain-source breakdown voltage of over 80 V, a gate-source voltage of up to +20 V, and a drain-source on-resistance of 1.2 mΩ. This power MOSFET has a continuous drain current of up to 299 A and power dissipation of less than 333 W.
This RoHS complaint MOSFET is available in a through-hole package that measures 7.9 x 8 mm and is ideal for synchronous rectification, Or-ing, motor drive control, battery management, and power supply applications.
