The IPB60R080P7 from Infineon Technologies is a MOSFET with Continous Drain Current 23 to 37 A, Drain Source Resistance 0.069 to 0.161 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPB60R080P7 can be seen below.