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IPB60R080P7

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IPB60R080P7 Image

The IPB60R080P7 from Infineon Technologies is a MOSFET with Continous Drain Current 23 to 37 A, Drain Source Resistance 0.069 to 0.161 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPB60R080P7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB60R080P7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    23 to 37 A
  • Drain Source Resistance
    0.069 to 0.161 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    51 nC
  • Power Dissipation
    129 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263-3
  • Applications
    PFC stages and PWM stages(TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents
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