1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPB60R145CFD7

IPB60R145CFD7

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPB60R145CFD7 Image

The IPB60R145CFD7 from Infineon Technologies is a MOSFET with Continous Drain Current 10 to 16 A, Drain Source Resistance 0.127 to 0.289 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB60R145CFD7 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPB60R145CFD7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 to 16 A
  • Drain Source Resistance
    0.127 to 0.289 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    31 nC
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263-3
  • Applications
    Suiteable for Soft Switching topologies, Optimized for phase-shift full-bridge(ZVS), LLC Applications Server, Telecom, EV Charging

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products