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IPB60R160P6

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IPB60R160P6 Image

The IPB60R160P6 from Infineon Technologies is a MOSFET with Continous Drain Current 15 to 23.8 A, Drain Source Resistance 0.144 to 0.374 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB60R160P6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB60R160P6
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15 to 23.8 A
  • Drain Source Resistance
    0.144 to 0.374 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    44 nC
  • Power Dissipation
    176 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263
  • Applications
    PFCstages, hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom and UPS

Technical Documents
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