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IPB65R115CFD7A

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IPB65R115CFD7A Image

The IPB65R115CFD7A from Infineon Technologies is a MOSFET with Continous Drain Current 13 to 21 A, Drain Source Resistance 0.103 to 0.115 Mohms, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB65R115CFD7A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB65R115CFD7A
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 to 21 A
  • Drain Source Resistance
    0.103 to 0.115 Mohms
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    41 nC
  • Power Dissipation
    114 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3
  • Applications
    UnidirectionalandbidirectionalDC-Dcconverters, On-BoardbatteryChargers

Technical Documents
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