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NTD280N60S5Z

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The NTD280N60S5Z from onsemi is a MOSFET with Continous Drain Current 8 to 13 A, Drain Source Resistance 224 to 280 milli-ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.4 to 4 V. Tags: Surface Mount. More details for NTD280N60S5Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTD280N60S5Z
  • Manufacturer
    onsemi
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 to 13 A
  • Drain Source Resistance
    224 to 280 milli-ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.4 to 4 V
  • Gate Charge
    17.9 nC
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3
  • Applications
    Computing / Display Power Supplies, Telecom / Server Power Supplies, Lighting / Charger / Adapter / Industrial Power Supplies

Technical Documents
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