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IPB65R310CFD

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IPB65R310CFD Image

The IPB65R310CFD from Infineon Technologies is a MOSFET with Continous Drain Current 7.2 to 11.4 A, Drain Source Resistance 0.280 to 0.730 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB65R310CFD can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB65R310CFD
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.2 to 11.4 A
  • Drain Source Resistance
    0.280 to 0.730 Mohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    41 nC
  • Power Dissipation
    104.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263

Technical Documents
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