The IPB80P04P4L-08 from Infineon Technologies is a MOSFET with Continous Drain Current -80 to -56 A, Drain Source Resistance 6.5 to 13.3 Mohms, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage -2.2 to -1.2 V. Tags: Through Hole. More details for IPB80P04P4L-08 can be seen below.