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BUZ11-NR4941

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The BUZ11-NR4941 from onsemi is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 30 to 40 milli-ohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for BUZ11-NR4941 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BUZ11-NR4941
  • Manufacturer
    onsemi
  • Description
    50 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    30 to 40 milli-ohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.1 to 4 V
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    TBA

Technical Documents
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