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IPD80R2k7C3A

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IPD80R2k7C3A Image

The IPD80R2k7C3A from Infineon Technologies is a MOSFET with Continous Drain Current 1.2 to 2 A, Drain Source Resistance 2.4 to 5.5 Mohms, Drain Source Breakdown Voltage 800 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 3.9 V. Tags: Through Hole. More details for IPD80R2k7C3A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD80R2k7C3A
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.2 to 2 A
  • Drain Source Resistance
    2.4 to 5.5 Mohms
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 3.9 V
  • Gate Charge
    12 to 16 nC
  • Power Dissipation
    42 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    Automotive

Technical Documents
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