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Si5504BDC

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Si5504BDC Image

The Si5504BDC from Vishay is a MOSFET with Continous Drain Current 3.7 A, Drain Source Resistance 53 to 235 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to 3 V. Tags: Surface Mount. More details for Si5504BDC can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5504BDC
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, Dual, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.7 A
  • Drain Source Resistance
    53 to 235 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to 3 V
  • Gate Charge
    2.2 to 4.5 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    1206-8 ChipFET
  • Applications
    DC/DC for portable applications, Load switch

Technical Documents
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