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Si7478DP

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Si7478DP Image

The Si7478DP from Vishay is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 6 to 8.8 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for Si7478DP can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7478DP
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    6 to 8.8 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    45 nC
  • Power Dissipation
    5.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8

Technical Documents
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