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IPD14N06S2-80

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IPD14N06S2-80 Image

The IPD14N06S2-80 from Infineon Technologies is a MOSFET with Continous Drain Current 12 to 17 A, Drain Source Resistance 50 to 80 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for IPD14N06S2-80 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD14N06S2-80
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 to 17 A
  • Drain Source Resistance
    50 to 80 Mohms
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 4 V
  • Gate Charge
    8 to 10 nC
  • Power Dissipation
    47 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
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