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IPD50N04S4L-08

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IPD50N04S4L-08 Image

The IPD50N04S4L-08 from Infineon Technologies is a MOSFET with Continous Drain Current 49 to 50 A, Drain Source Resistance 6.2 to 10.5 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for IPD50N04S4L-08 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD50N04S4L-08
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    49 to 50 A
  • Drain Source Resistance
    6.2 to 10.5 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    5.8 to 7.5 nC
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TO252-3-313
  • Applications
    Automotive

Technical Documents
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