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IPD60R360CFD7

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IPD60R360CFD7 Image

The IPD60R360CFD7 from Infineon Technologies is a MOSFET with Continous Drain Current 5 to 7 A, Drain Source Resistance 0.295 to 0.674 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPD60R360CFD7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD60R360CFD7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 to 7 A
  • Drain Source Resistance
    0.295 to 0.674 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    14 nC
  • Power Dissipation
    43 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    Suiteable for Soft Switching topologies, Optimized for phase-shift full-bridge(ZVS), LLC Applications Server, Telecom, EV Charging

Technical Documents
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