The IPD60R360P7S from Infineon Technologies is a MOSFET with Continous Drain Current 6 to 9 A, Drain Source Resistance 0.300 to 0.702 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPD60R360P7S can be seen below.