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IPD60R600P7S

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IPD60R600P7S Image

The IPD60R600P7S from Infineon Technologies is a MOSFET with Continous Drain Current 4 to 6 A, Drain Source Resistance 0.490 to 1.152 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPD60R600P7S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD60R600P7S
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 to 6 A
  • Drain Source Resistance
    0.490 to 1.152 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    9 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silver box, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS

Technical Documents
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