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IPD80R280P7

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IPD80R280P7 Image

The IPD80R280P7 from Infineon Technologies is a MOSFET with Continous Drain Current 10.6 to 17 A, Drain Source Resistance 0.24 to 0.62 Mohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for IPD80R280P7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD80R280P7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10.6 to 17 A
  • Drain Source Resistance
    0.24 to 0.62 Mohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    36 nC
  • Power Dissipation
    101 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    Recommended for ZV Stopologies used in high density chargers, adapters, lighting and motordrives applications, etc.

Technical Documents
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