1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPDD60R102G7

IPDD60R102G7

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPDD60R102G7 Image

The IPDD60R102G7 from Infineon Technologies is a MOSFET with Continous Drain Current 15 to 23 A, Drain Source Resistance 0.088 to 0.220 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Surface Mount. More details for IPDD60R102G7 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPDD60R102G7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15 to 23 A
  • Drain Source Resistance
    0.088 to 0.220 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    34 nC
  • Power Dissipation
    139 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HDSOP-10
  • Applications
    PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products