1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPG16N10S4L-61A

IPG16N10S4L-61A

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPG16N10S4L-61A Image

The IPG16N10S4L-61A from Infineon Technologies is a MOSFET with Continous Drain Current 11 to 16 A, Drain Source Resistance 47 to 78 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.1 to 2.1 V. Tags: Surface Mount. More details for IPG16N10S4L-61A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPG16N10S4L-61A
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 to 16 A
  • Drain Source Resistance
    47 to 78 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.1 to 2.1 V
  • Gate Charge
    8.5 to 11 nC
  • Power Dissipation
    29 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-10
  • Applications
    Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products