1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPI47N10S-33

IPI47N10S-33

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPI47N10S-33 Image

The IPI47N10S-33 from Infineon Technologies is a MOSFET with Continous Drain Current 33 to 47 A, Drain Source Resistance 25 to 33 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for IPI47N10S-33 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPI47N10S-33
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    33 to 47 A
  • Drain Source Resistance
    25 to 33 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 4 V
  • Gate Charge
    70 to 105 nC
  • Power Dissipation
    175 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO262-3-1
  • Applications
    Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products